La Legge di Moore, coniata da Gordon Moore, co-fondatore di Intel, nel 1965, ha previsto con notevole precisione l’andamento dell’industria dei semiconduttori per oltre mezzo
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FINFET, il transistor con le pinne
Più di quarant’anni dopo l’impetuosa diffusione dei transistor MOSFET planari e nel mezzo della discussione sul superamento della legge di Moore, assistiamo all’introduzione di un
Read moreMRF101AN: 100 W CW over 1.8-250 MHz, 50 V Wideband RF Power LDMOS Transistor
These devices, MRF101AN and MRF101BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The
Read moreAmpleon announces the industry’s most rugged 2KW RF power LDMOS transistor for ISM applications
Ampleon has released the first of a family of RF power devices based upon its Advanced Rugged Technology (ART) derivative of the proven 9th generation
Read moreMRFX1K80H: 1800 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor
The MRFX1K80H is the first device based on NXP’s new 65 V LDMOS technology that focuses on ease of use. This high ruggedness transistor is
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